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SXA-3318BZ - Medium Power GaAs HBT Amplifier

This page provides the datasheet information for the SXA-3318BZ, a member of the SXA-3318B Medium Power GaAs HBT Amplifier family.

Description

Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package.

Features

  • Now available in Lead Free, RoHS Compliant, & Green Packaging.
  • On-chip Active Bias Control.
  • Balanced for excellent input/output VSWR and minimized reflections.
  • High OIP3 : +47 dBm typ. SXA-3318B 5V.
  • High P1dB : +28 dBm typ.
  • Patented High Reliability GaAs HBT Technology.
  • Surface-Mountable Power Plastic Package RFin 1 2 3 4 8 7 6 5.

📥 Download Datasheet

Datasheet preview – SXA-3318BZ

Datasheet Details

Part number SXA-3318BZ
Manufacturer Sirenza Microdevices
File Size 221.98 KB
Description Medium Power GaAs HBT Amplifier
Datasheet download datasheet SXA-3318BZ Datasheet
Additional preview pages of the SXA-3318BZ datasheet.

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Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SXA-3318B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in a low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
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