CDB7619-000 Datasheet PDF - Skyworks Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Specs

CDB7619-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads

This page provides the datasheet information for the CDB7619-000, a member of the CDB7620-000 Silicon Schottky Barrier Diode Bondable Chips and Beam Leads family.

Datasheet Summary

Description

Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

Available in both P-type and N-type low barrier designs.
Low 1/f noise.
Large bond pad chip design.
Planar passivated beam-lead and chip construction.

Datasheet Details

Part number	CDB7619-000
Manufacturer	Skyworks
File Size	582.87 KB
Description	Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
Datasheet	CDB7619-000 Datasheet
Additional preview pages of the CDB7619-000 datasheet.

📁 Similar Datasheet

CDB0130QRM - Schottky Barrier Diode (Crownpo)

CDB0130QRM - Schottky Barrier Diode (msksemi)

CDB0230M - Chip Schottky Barrier Diode (MAYLOON)

CDB455C10 - High Performance Ceramic Discriminator (Murata)

CDB455C13A - High Performance Ceramic Discriminator (Murata)

CDB455C16 - High Performance Ceramic Discriminator (Murata)

CDB455C16 - FILTERS (Murata Electronics)

CDB455C21 - High Performance Ceramic Discriminator (Murata)

CDB455C24 - High Performance Ceramic Discriminator (Murata)

CDB455C27 - High Performance Ceramic Discriminator (Murata)

Full PDF Text Transcription

Click to expand full text

DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction Description Skyworks beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.

Published: Jun 28, 2019 |