Datasheet4U Logo Datasheet4U.com

CDB7619-207 - Silicon Schottky Barrier Diodes

This page provides the datasheet information for the CDB7619-207, a member of the CDB7620-203 Silicon Schottky Barrier Diodes family.

Datasheet Summary

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020.

📥 Download Datasheet

Datasheet preview – CDB7619-207

Datasheet Details

Part number CDB7619-207
Manufacturer Skyworks
File Size 578.68 KB
Description Silicon Schottky Barrier Diodes
Datasheet download datasheet CDB7619-207 Datasheet
Additional preview pages of the CDB7619-207 datasheet.

📁 Similar Datasheet

  • CDB0130QRM - Schottky Barrier Diode (Crownpo)
  • CDB0130QRM - Schottky Barrier Diode (msksemi)
  • CDB0230M - Chip Schottky Barrier Diode (MAYLOON)
  • CDB455C10 - High Performance Ceramic Discriminator (Murata)
  • CDB455C13A - High Performance Ceramic Discriminator (Murata)
  • CDB455C16 - High Performance Ceramic Discriminator (Murata)
  • CDB455C16 - FILTERS (Murata Electronics)
  • CDB455C21 - High Performance Ceramic Discriminator (Murata)
  • CDB455C24 - High Performance Ceramic Discriminator (Murata)
  • CDB455C27 - High Performance Ceramic Discriminator (Murata)
Other Datasheets by Skyworks
  • CDB7619-203 - Silicon Schottky Barrier Diodes
  • CDB7619-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
  • CDB7620-000 - Silicon Schottky Barrier Diode Bondable Chips and Beam Leads
  • CDB7620-203 - Silicon Schottky Barrier Diodes
  • CDB7620-207 - Silicon Schottky Barrier Diodes

Full PDF Text Transcription

Click to expand full text
DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
Published: |