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CDB7620-203 - Silicon Schottky Barrier Diodes

Datasheet Summary

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020.

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Datasheet preview – CDB7620-203

Datasheet Details

Part number CDB7620-203
Manufacturer Skyworks
File Size 578.68 KB
Description Silicon Schottky Barrier Diodes
Datasheet download datasheet CDB7620-203 Datasheet
Additional preview pages of the CDB7620-203 datasheet.

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Full PDF Text Transcription

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DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
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