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CDB7620-207 - Silicon Schottky Barrier Diodes

This page provides the datasheet information for the CDB7620-207, a member of the CDB7620-203 Silicon Schottky Barrier Diodes family.

Datasheet Summary

Description

Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band.

They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.

Features

  • Available in both P-type and N-type low barrier designs.
  • Low 1/f noise.
  • Packages rated MSL1, 260 C per JEDEC J-STD-020.

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Datasheet preview – CDB7620-207

Datasheet Details

Part number CDB7620-207
Manufacturer Skyworks
File Size 578.68 KB
Description Silicon Schottky Barrier Diodes
Datasheet download datasheet CDB7620-207 Datasheet
Additional preview pages of the CDB7620-207 datasheet.

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Full PDF Text Transcription

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DATA SHEET Silicon Schottky Barrier Diodes in Hermetic and Epoxy Ceramic Packages Applications  Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Packages rated MSL1, 260 C per JEDEC J-STD-020 Description Our packaged Schottky barrier detector diodes are designed for applications through 20 GHz in the Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. N-type silicon is also available.
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