CXK77B1810AGB-5 Description
The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC.
CXK77B1810AGB-5 Key Features
- Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz
- Inputs and outputs are GTL/HSTL patible
- Controlled Impedance Driver
- Single 3.3V power supply: 3.3V±0.15V
- Byte-write possible
- OE asynchronization
- JTAG test circuit
- Package 119TBGA
- 4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latc