CXK77B1810AGB-5 Datasheet | Sony Semiconductor Solutions

CXK77B1810AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and Features the delayed write system to reduce the dead cycles. Features - Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz - Inputs and outputs are GTL/HSTL patible - Controlled Impedance Driver - Single 3.3V power supply: 3.3V±0.15V - Byte-write possible - OE asynchronization - JTAG test circuit - Package 119TBGA - 4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode) Dual clock mode (D-C mode) Preliminary For the availability of this product, please contact the sales office. 119 pin BGA (Plastic) Function 65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM Structure Silicon gate Bi-CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- PE96811 CXK77B1810AGB Block Diagram 16 A0 to 15 Input Reg. 2:1 Mux Add. Dout 2:1 Mux Write Store Reg. 64K × 18 Din Write pulse Output latch Reg. Read p. S...