CXK77B1810AGB - High Speed Bi-CMOS Synchronous Static RAM

Datasheet Summary

Description

The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits.

Features

the delayed write system to reduce the dead cycles. Features.
Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz.
Inputs and outputs are GTL/HSTL compatible.
Controlled Impedance Driver.
Single 3.3V power supply: 3.3V±0.15V.
Byte-write possible.
OE asynchronization.
JTAG test circuit.
Package 119TBGA.
4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru.

Sony Corporation

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Datasheet Details

Part number	CXK77B1810AGB
Manufacturer	Sony Corporation
File Size	82.53 KB
Description	High Speed Bi-CMOS Synchronous Static RAM
Datasheet	CXK77B1810AGB Datasheet
Additional preview pages of the CXK77B1810AGB datasheet.

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Full PDF Text Transcription

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CXK77B1810AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.

Published: Mar 27, 2005 |