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CXK77B1810AGB - High Speed Bi-CMOS Synchronous Static RAM

General Description

The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits.

Key Features

  • the delayed write system to reduce the dead cycles. Features.
  • Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz.
  • Inputs and outputs are GTL/HSTL compatible.
  • Controlled Impedance Driver.
  • Single 3.3V power supply: 3.3V±0.15V.
  • Byte-write possible.
  • OE asynchronization.
  • JTAG test circuit.
  • Package 119TBGA.
  • 4 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CXK77B1810AGB -5/6 High Speed Bi-CMOS Synchronous Static RAM Description The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.