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CXK77P18E160GB - 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)

This page provides the datasheet information for the CXK77P18E160GB, a member of the CXK 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) family.

Datasheet Summary

Description

The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins.

Features

  • 4 Speed Bins -4 (-4A) (-4B) -42 (-42A) (-42B) -43 (-43A) (-43B) -44 Cycle Time / Access Time 4.0ns / 3.9ns (3.8ns) (3.7ns) 4.2ns / 4.2ns (4.1ns) (4.0ns) 4.3ns / 4.5ns (4.4ns) (4.3ns) 4.4ns / 4.7ns.
  • Single 3.3V power supply (VDD): 3.3V ± 5% Dedicated output supply voltage (VDDQ): 1.9V typical HSTL-compatible I/O interface with dedicated input refer.

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Datasheet preview – CXK77P18E160GB

Datasheet Details

Part number CXK77P18E160GB
Manufacturer Sony Corporation
File Size 257.03 KB
Description 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
Datasheet download datasheet CXK77P18E160GB Datasheet
Additional preview pages of the CXK77P18E160GB datasheet.

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Full PDF Text Transcription

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SONY® CXK77P36E160GB / CXK77P18E160GB 4/42/43/44 Preliminary 16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input registers, high speed RAM, output latches, and a one-deep write buffer onto a single monolithic IC. Register - Latch (R-L) read operations and Late Write (LW) write operations are supported, providing a high-performance user interface. Two distinct R-L modes of operation are supported, selectable via the M2 mode pin.
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