SLD231VL Datasheet | Sony Semiconductor Solutions

Description The SLD231VL is a high-power, index-guided Al Ga As laser diode. Features - Low current consumption - Small astigmatism - Small package (φ5.6mm) Applications Pickup for optical discs Structure - Al Ga As quantum well structured laser diode - PIN photodiode for optical power output monitor Remended Operating Optical Power Output Absolute Maximum Ratings (Tc = 25°C) - Optical power output PO - Reverse voltage VR - Operating temperature - Storage temperature Topr Tstg 35m W M-274 LD PD 40 2 15 - 10 to +60 - 40 to +85 m W V V °C °C Connection Diagram 3 MON Pin Configuration PD 2 1 3 1. LD anode 2. PD anode 3. MON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E94Y22B97-PS Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Radiation angle Positional accuracy Perpendicular Parallel Position Angle Ith Iop Vop λ θ⊥ θ// ∆X, ∆Y, ∆Z ∆φ⊥ ∆φ// ηD As Im PO = 35m W PO = 35m W PO = 35m W, Vr = 5V PO = 35m W PO = 35m W PO = 35m W PO = 35m W PO = 35m W Symbol Conditions Min. 10 35 - 780 20 7 - - - 0.7 - - Typ. 20 55 2.0 790 24 9 - - - 1.0 - 0.10 Tc: Case temperature Max. 40 70 2.5 800 28 12 ±80 ±3 ±3 1.3 6 - Unit m A m A V nm degree degree µm degree degree m W/m A µm m A Differential efficiency Astigmatism Monitor current Handling Precautions (1) Eye protection against laser beams The optical output of laser diodes ranges from several m W to 4W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a...