SLD237VL Datasheet | Sony Semiconductor Solutions

Description The SLD237VL is a high-power, index-guided Al Ga As laser diode. Features - High power - Low current consumption - Small astigmatism - Small package (φ5.6mm) Applications Optical pickup for CD-R/RW Structure Al Ga As quantum well structured laser diode Remended Operating Optical Power Output Absolute Maximum Ratings - Optical power output Pomax 80m W M-274 90 m W (CW) 130 m W (Pulse) Pulse width 200ns or less Duty 50% or less LD 2 - 10 to +70 - 40 to +85 V °C (Pulse Operation) °C - Reverse voltage - Operating temperature - Storage temperature VR Topr Tstg Connection Diagram 3 MON Pin Configuration 2 1 3 1. LD anode 2. N.C. 3. MON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E00852B19-PS Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Wavelength Differential efficiency Radiation angle Astigmatism Positional accuracy Angle Position Paralell Perpendicular Ith Iop Vop λp ηD θ// θ⊥ As ∆φ// ∆φ⊥ ∆X, ∆Y, ∆Z Symbol CW CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W CW, Po = 80m W Conditions Min. 25 90 - 779 0.7 7.4 15.0 - 6 - - - Typ. 30 110 2.0 784 1.0 8.3 18.0 - - - - Tc: Case temperature Max. 40 130 2.3 789 1.3 9.5 21.0 0 ±1.6 ±2.5 ±80 Unit m A m A V nm m W/m A deg deg µm deg deg µm - 2- Notes on Operation Care should be taken for the following points when using this product. (1) This product corresponds to a Class 3B product under IEC60825-1 and JIS standard C6802 "Laser Product Emission Safety Standards". LASER DIODE LASER DIODE This product plies with 21...