SLD233VL
SLD233VL is Index-Guided High Power AlGaAs Laser Diode manufactured by Sony Semiconductor Solutions.
Description
The SLD233VL is a high power index-guided Al Ga As laser diode. Features
- Low noise
- Low power consumption Applications Pickups for Mini Disc recording/playback Structure
- Al Ga As quantum well-structure laser diode
- PIN photodiode for optical power output monitor Remended Operating Optical Power Output 30m W Absolute Maximum Ratings (Tc = 25°C)
- Optical power output PO 35 m W
- Reverse voltage VR LD 2 V PD 15 V
- Operating temperature Topr
- 10 to +60 °C
- Storage temperature Tstg
- 40 to +85 °C Connection Diagram
3 MON
M-274
Pin Configuration
PD 2 1
LD 2 1
3 1. LD ANODE 2. PD ANODE 3. MON Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
- 1-
E97940-PS
Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Positional accuracy Ith Iop Vop λ θ// ∆X, ∆Y, ∆Z ∆φ⊥ ∆φ// ηD As γ PO = 4m W PO = 30m W 0.55 0.9
- 16 0.7 PO = 35m W PO = 35m W PO = 35m W PO = 35m W PO = 35m W 780 26 7.4 Symbol Conditions Min. Typ. 30 70 2.0 790 28.5 8.5
Tc: Case temperature Max. 40 85 2.5 800 32 10.0 ±80 ±3 ±2 1.2 Unit m A m A V nm degree degree µm degree degree m W/m A µm 0.9
Perpendicular θ⊥ Parallel Position Angle
Differential efficiency Astigmatism Coherence
- 2-
Package Outline
Unit: mm
M-274
Reference Slot 0.5 3 1.0
90°
0 φ5.6
- 0.025 Window Glass φ4.4 MAX φ3.7 MAX φ1.0 MIN 0.5 MIN
2 3 1 3
- φ0.45 PCD φ2.0
∗Optical Distance = 1.35 ±...