SLD234VL Datasheet | Sony Semiconductor Solutions

Description The SLD234VL is a high power index-guided Al Ga As laser diode. Features - High power - Low power consumption - Low astigmatism - Small package (φ5.6mm) Applications Pickups for optical discs Structure - Al Ga As quantum well-structured laser diode - PIN photodiode for optical power output monitor Remended Operating Optical Power Output 50m W Absolute Maximum Ratings (Tc = 25°C) - Optical power output PO 50 80 M-260 m W (CW) m W (Pulse) Pulse period of 1µs or less Duty of 50% or less - Reverse voltage VR LD 2 V PD 15 V - Operating temperature Topr - 10 to +60 °C - Storage temperature Tstg - 40 to +85 °C Connection Diagram 3 MON Pin Configuration PD 2 1 3 1. LD ANODE 2. PD ANODE 3. MON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. - 1- E97941A99-PS Optical and Electrical Characteristics (Tc = 25°C) Item Threshold current Operating current Operating voltage Oscillation wavelength Differential efficiency Radiation angle Astigmatism Monitor current Angle Position Parallel Ith Iop Vop λp ηD θ// Symbol CW CW, PO = 50m W CW, PO = 50m W CW, PO = 50m W CW, PO = 50m W CW, PO = 50m W CW, PO = 50m W CW, PO = 50m W CW, PO = 50m W, VR (PIN) = 5V CW, PO = 50m W CW, PO = 50m W Conditions Min. 15 60 - 775 0.8 7 19 - - - - - Typ. 20 70 2.0 785 1.0 8.5 22 - 0.05 - - - Tc: Case temperature Max. 30 85 2.5 795 1.3 10 27 - 6 - ±2.0 ±3.0 ±80 Unit m A m A V nm m W/m A degree degree µm m A degree degree µm Perpendicular θ⊥ As Im ∆φ// ∆φ⊥ ∆X, ∆Y, ∆Z Positional accuracy - 2- Package Outline Unit: mm M-260 Reference Slot 0.5...