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SSS3403
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
-30V
SOT-23
D
ID (A)
-3.4A
RDS(ON) (mΩ) Max 45 @VGS = -10V
G
80 @VGS = -4.5V
S
D
FEATURES
Super high density cell design for low RDS(ON). Rugged and reliable. SOT-23 package. Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-30 + - 20 -3.4 -12 -1.25 1.