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SSS3401 - P-Channel MOSFET

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. G S.

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Datasheet Details

Part number SSS3401
Manufacturer South Sea Semiconductor
File Size 166.38 KB
Description P-Channel MOSFET
Datasheet download datasheet SSS3401 Datasheet

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Other Datasheets by South Sea Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSS3401 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SOT-23 D ID (A) -3A RDS(ON) (mΩ) Max 75 @VGS = -10V G 100 @VGS = -4.5V S D FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package. G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit -30 + - 20 -3 -10 -1.25 1.