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SSS3400
N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V)
30V
SOT-23
D
ID (A)
3.5A
RDS(ON) (mΩ) Max 40 @VGS = 10V
G
60 @VGS = 4.5V
S
D
FEATURES
Super high dense cell design for low RDS(ON). Rugged and reliable. SOT-23 package.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
30 + - 20 3.5 13 1.25 1.