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SSS5N20 - Dual N-Channel MOSFET

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3).

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Datasheet Details

Part number SSS5N20
Manufacturer South Sea Semiconductor
File Size 85.66 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SSS5N20 Datasheet

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SSS5N20 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @VGS = 4.5V 20V 4A 45 @VGS = 2.5V D1 (2, 5) 1 TSOP-6 D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount package. G1(6) S1(1) G2(4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed b o o Symbol VDS VGS ID IDM a Limit 20 + - 10 4 25 2 1.