ST3421SRG Overview
Description
ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- 60V/-5.0A, RDS(ON) = 150m-ohm (Typ.) @VGS = -10V
- Rev.1 ST3421SRG P Channel Enhancement Mode MOSFET
- 60 ±20 -5.0 -3.5 -12 Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature IS PD TJ
- 1.25 1.25 0.8 150 Storgae Temperature Range TSTG
- 55/150 RθJA 100 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA ST3421SRG
