ST3426 Overview
Description
The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.
Key Features
- 60V/3.0A, RDS(ON) = 90mΩ @VGS = 10V l
- 60V/2.0A, RDS(ON) = 110mΩ @VGS = 4.5V l
- Super high density cell design for extremely low RDS(ON) l
- Exceptional on-resistance and maximum DC current capability l
- SOT-23 package design PART MARKING SOT-23 Y: Year Code A: Process Code 1 120 Bentley Square, Mountain View, Ca 94040 USA STN3426
