Datasheet Details
| Part number | ST3426 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 705.58 KB |
| Description | 3A N-Channel Enhancement Mode MOSFET |
| Datasheet | ST3426-StansonTechnology.pdf |
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Overview: ST3426 N Channel Enhancement Mode MOSFET 3.0A.
| Part number | ST3426 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 705.58 KB |
| Description | 3A N-Channel Enhancement Mode MOSFET |
| Datasheet | ST3426-StansonTechnology.pdf |
|
|
|
The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.
| Part Number | Description |
|---|---|
| ST3421SRG | P-Channel Enhancement Mode MOSFET |
| ST3422A | MOSFET |
| ST3424 | MOSFET |
| ST3400 | N Channel Enhancement Mode MOSFET |
| ST3400S23RG | N-Channel Enhancement Mode MOSFET |
| ST3400SRG | N-Channel Enhancement Mode MOSFET |
| ST3401 | P-Channel Enhancement Mode MOSFET |
| ST3401M23RG | P-Channel Enhancement Mode MOSFET |
| ST3401SRG | P-Channel Enhancement Mode MOSFET |
| ST3402 | N Channel Enhancement Mode MOSFET |