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ST3424 - MOSFET

Description

The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high-density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3424
Manufacturer Stanson Technology
File Size 701.24 KB
Description MOSFET
Datasheet download datasheet ST3424 Datasheet
Additional preview pages of the ST3424 datasheet.

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Full PDF Text Transcription

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ST3424 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION The ST3424 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23 3 D G S 12 FEATURE l 60V/4.0A, RDS(ON) = 55mΩ @VGS = 10V l 60V/3.0A, RDS(ON) = 60mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOT-23 package design 1.Gate 2.Source 3.
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