STN4822 Datasheet | Stanson Technology

Dual N Channel Enhancement Mode MOSFET 8.5A DESCRIPTION STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system. PIN CONFIGURATION SOP-8 FEATURE - 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V - 30V/6.6A, RDS(ON) = 26mΩ @VGS = 4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - SOP-8 package design PART MARKING SOP-8 Y:Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA .stansontech. Copyright © 2007, Stanson Corp. STN4822 2009. V1 Dual N Channel Enhancement Mode MOSFET 8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃...