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STN4822
Dual N Channel Enhancement Mode MOSFET
8.5A
DESCRIPTION
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered system.
PIN CONFIGURATION SOP-8
FEATURE
� 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V
� 30V/6.6A, RDS(ON) = 26mΩ @VGS = 4.5V
� Super high density cell design for extremely low RDS(ON)
� Exceptional on-resistance and maximum DC current capability
� SOP-8 package design
PART MARKING SOP-8
Y:Year Code A: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com
Copyright © 2007, Stanson Corp.
STN4822 2009.
STN4822 Datasheet
