Datasheet4U Logo Datasheet4U.com

STN4822 - MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – STN4822

Datasheet Details

Part number STN4822
Manufacturer Stanson Technology
File Size 510.05 KB
Description MOSFET
Datasheet download datasheet STN4822 Datasheet
Additional preview pages of the STN4822 datasheet.

Product details

Description

STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. 30V/8.5A, RDS(ON) = 16mΩ (Typ.) @VGS = 10V 30V/6.6A, RDS(ON) = 26mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capabili

📁 Similar Datasheet

  • STN4826 - Dual N-Channel Enhancement Mode MOSFET (Stanson)
  • STN4842 - Dual N-Channel Enhancement Mode MOSFET (Semtron)
  • STN4850 - N-Channel Enhancement Mode MOSFET (STANSON)
  • STN488DN - N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4260 - 18A N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4346 - 6.8A N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4392 - N-Channel Enhancement Mode MOSFET (STANSON)
  • STN4420 - 30V N-Channel Enhancement Mode MOSFET (Semtron)
Other Datasheets by Stanson Technology
Published: |