Datasheet Details
| Part number | STP6506 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 836.92 KB |
| Description | MOSFET |
| Datasheet | STP6506-StansonTechnology.pdf |
|
|
Overview: STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A.
| Part number | STP6506 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 836.92 KB |
| Description | MOSFET |
| Datasheet | STP6506-StansonTechnology.pdf |
|
|
|
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
| Part Number | Description |
|---|---|
| STP601 | P-Channel Enhancement Mode MOSFET |
| STP601D | P-Channel Enhancement Mode MOSFET |
| STP607D | MOSFET |
| STP6621 | P-Channel Enhancement Mode MOSFET |
| STP6623 | P-Channel Enhancement Mode MOSFET |
| STP6625 | MOSFET |
| STP6635GH | MOSFET |
| STP1013 | MOSFET |
| STP3052D | MOSFET |
| STP3467 | MOSFET |