Stanson Technology STP6506
The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.| Part No. | STP6506 |
|---|---|
| Datasheet | STP6506 Download |
| Manufacturer |  Stanson Technology |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION TSOP-6 D1 S1 D2 06YW FEATURE● -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V
● -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional an-resistance and maximum DC current capability
● TSOP-6P package design G1 S2 G2 Y: Year A: Produces Code p-channel p-channel STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA STP6506 2010. V1 STP6506 Dual P Channel Enhancement Mode MOSFET -2.8A ABSOULTE
MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation Operation Junctio...
