The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
| Part number | STP6506 |
|---|---|
| Manufacturer | Stanson Technology |
| File Size | 836.92 KB |
| Description | MOSFET |
| Datasheet |
 STP6506 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| STP652F | N-Channel Logic Level Enhancement Mode Field Effect Transistor | SamHop |
| STP656F | N-Channel Enhancement Mode Field Effect Transistor | SamHop |
| STP65N045M9 | N-channel Power MOSFET | STMicroelectronics |
| STP65N150M9 | N-CHANNEL Power MOSFET | STMicroelectronics |
| STP65NF06 | N-channel Power MOSFET | STMicroelectronics |
| Part Number | Description |
|---|---|
| STP601 | P-Channel Enhancement Mode MOSFET |
| STP601D | P-Channel Enhancement Mode MOSFET |
| STP607D | MOSFET |
| STP6621 | P-Channel Enhancement Mode MOSFET |
| STP6623 | P-Channel Enhancement Mode MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
