STP6506 Datasheet | Stanson Technology

Dual P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION The STC6506 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage application, such as notebook puter power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. PIN CONFIGURATION TSOP-6 D1 S1 D2 06YW FEATURE - -30V/-2.8A, RDS(ON)=105mohm@VGS=-10V - -30V/-2.5A, RDS(ON)=135mohm@VGS=-4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional an-resistance and maximum DC current capability - TSOP-6P package design G1 S2 G2 Y: Year A: Produces Code p-channel p-channel STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://.stansontech. STP6506 2010. V1 Dual P Channel Enhancement Mode MOSFET -2.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=70℃ ID...