STP6621 Datasheet | Stanson Technology

SCRIPTION P Channel Enhancement Mode MOSFET -18.0A STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. PIN CONFIGURATION SOP-8 FEATURE -60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V -60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package...