Datasheet Summary
P Channel Enhancement Mode MOSFET
-5.0A
SCRIPTION
STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8
FEATURE l- -60V/-5.0A, RDS(ON) = 60mΩ (Typ.) @VGS =-10 l- -60V/-3.0A, RDS(ON) = 85mΩ @VGS = -4.5V l- Super high density cell design for extremely low RDS(ON) l- Exceptional on-resistance and maximum DC current capability l- SOP-8...