STP6625 Datasheet PDF | Stanson Technology

Stanson Technology STP6625

STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.

Part No.	STP6625
Datasheet	STP6625 Download
Manufacturer	Stanson Technology
Description	MOSFET
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MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VGSS ID IDM IS PD TJ Storgae Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -60 ±20 -5.0 -4.0 -25 -3 2.3 1.3 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA . STP6625 2010. V1 STP6625 P Channel Enhancement Mode MOSFET -5.0A

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA -60 VGS(th) VDS=VGS,ID=-250 uA -0.8 V -2.5 V Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-source On-Resistance Forward Tran Conductance RDS(on) gfs VDS=0V,VGS=±20V VDS=-48V,VG...