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STP6625
P Channel Enhancement Mode MOSFET
-5.0A
SCRIPTION
STP6625 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8
FEATURE
l -60V/-5.0A, RDS(ON) = 60mΩ (Typ.) @VGS =-10
l -60V/-3.0A, RDS(ON) = 85mΩ @VGS = -4.
STP6625 Datasheet
