STP6623 Datasheet PDF | Stanson Technology

Stanson Technology STP6623

STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.

Part No.	STP6623
Datasheet	STP6623 Download
Manufacturer	Stanson Technology
Description	P-Channel Enhancement Mode MOSFET
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MAXIMUM RATINGS

(Ta = 25℃ Unless otherwise noted ) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature VDSS VGSS ID IDM IS PD TJ Storgae Temperature Range Thermal Resistance-Junction to Ambient TSTG RθJA Typical -60 ±20 -18.0 -11.0 -50 -4.3 3.1 2.0 -55/150 -55/150 70 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA . STP6623 2010. V1 STP6623 P Channel Enhancement Mode MOSFET -18.0A

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=-250uA -60 VGS(th) VDS=VGS,ID=-250 uA -0.8 V -2.5 V Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Tran Conductance IGSS IDSS ID(on) RDS(...