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SCRIPTION
STP6623
P Channel Enhancement Mode MOSFET
-18.0A
STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching.
PIN CONFIGURATION SOP-8
FEATURE
-60V/-10.0A, RDS(ON) = 23mΩ (Typ.) @VGS =-10V
-60V/-8.0A, RDS(ON) = 28mΩ @VGS = -4.5V
Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design
PART MARKING SOP-8
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
STP6623 Datasheet
