Supertex Inc TN2535
N-Channel Enhancement-Mode Vertical DMOS FETs
| Part No. | TN2535 |
|---|---|
| Datasheet | TN2535 Download |
| Manufacturer |  Supertex Inc |
| Description | N-Channel Enhancement-Mode Vertical DMOS FETs |
| Buy | Stock & Price |
FEATURES
❏ Low threshold ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Product marking for TO-243AA TN5S❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
