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TN2535 - N-Channel Enhancement-Mode Vertical DMOS FETs

Key Features

  • ❏ Low threshold ❏ High input impedance ❏ Low input capacitance.
  • 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Product marking for TO-243AA TN5S❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the powe.

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Datasheet Details

Part number TN2535
Manufacturer Supertex Inc
File Size 495.61 KB
Description N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet TN2535 Datasheet

Full PDF Text Transcription (Reference)

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TN2535 Low Threshold New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V * Same as SOT-89. RDS(ON) (max) 10Ω VGS(th) (max) 2.0V ID(ON) (min) 1.0A Order Number / Package TO-243AA* TN2535N8 Product supplied on 2000 piece carrier tape reels. Features ❏ Low threshold ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage Product marking for TO-243AA TN5S❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process.