D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
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VN01C
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOClS
160V 200V
ROS{ON)
(max)
100 100
IOION)
(min)
0.4A O.4A
TO-39
VN0116N2 VN0120N2
Order Number I Package
TO-92
TQ-220
VN0116N3 VN0120N3
VN0116N5 VN0120N5
Dice
VN0116ND VN0120ND
Features
D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
VN01C Datasheet
