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VP01C - P-Channel Enhancement-Mode Vertical DMOS FETs

Datasheet Summary

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling ca.

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Datasheet Details

Part number VP01C
Manufacturer Supertex
File Size 223.02 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP01C Datasheet
Additional preview pages of the VP01C datasheet.

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Full PDF Text Transcription

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" !iupertexinc. VP01C P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss ' BVOGS -160V -200V ROS(ON) (max) 250 250 IO(ON) (min) -250mA -250mA TO·39 VP0116N2 VP0120N2 Order Number' Package TO·92 TO·220 VP0116N3 VP0116N5 VP0120N3 VP0120N5 DICE VP0116ND VP0120ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
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