CNY21 - Optocoupler

This page provides the datasheet information for the CNY21, a member of the CNY Optocoupler family.

Product Overview

TEMIC Semiconductors

Part number	CNY21
Manufacturer	TEMIC Semiconductors
File Size	Direct Link
Description	Optocoupler
Datasheet	CNY21 Datasheet
Additional preview pages of the CNY21 datasheet.

The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.

input and output for highest safety requirements of > 3 mm.

According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2.

Other Datasheets by TEMIC Semiconductors

Published: Mar 23, 2005 |