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CNY21 - Optocoupler

Download the CNY21 datasheet PDF. This datasheet also covers the CNY variant, as both devices belong to the same optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.

input and output for highest safety requirements of > 3 mm.

Key Features

  • According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CNY-21.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CNY21
Manufacturer TEMIC Semiconductors
File Size Direct Link
Description Optocoupler
Datasheet download datasheet CNY21 Datasheet

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Other Datasheets by TEMIC Semiconductors

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
U Phototransistor Output Optocoupler 4 with at .D w The single components are mounted on one leadframe in Application Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): D For application class I - IV at mains voltage ≤ 300 V D For application class I - IV at mains voltage ≤ 600 V D For application class I - III at mains voltage ≤ 1000 V according, to VDE 0884, table 2, suitable for: m o .c CNY21N Description The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. h S a t e e w w the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm.