Description
The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.
Features
- According to VDE 0884
D Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage)
Vpd = 2.8 kV peak
D Rated isolation voltage (RMS includes DC)
VIOWM = 1000 VRMS (1450 V peak)
D Rated recurring peak voltage (repetitive)
VIORM = 1000 VRMS
D Creeping current resistance according to
VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275
D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree.
CNY21N Datasheet
