CNY21N
Overview
The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm.
- Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
- Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak
- Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak)
- Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS
- Creeping current resistance according to
