Description
The CNY21Exi consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4 lead plastic dual inline packages.
Features
- D UL-recognized-file No: E 76414
D DC isolation test voltage: 10 kV
D Creeping current resistance of isolation material according to VDE 0303/DIN 53480: KB ≥ 150/KC ≥ 175
D Isolation material according to UL 94 -flammability class
D Test class 25/100/21 DIN 40045 D Very low coupling capacity, typical 0.3 pF
therefore high noise voltage resistant D Current Transfer Ratio typical 80% D Low temperature coefficient of CTR
Pin Connection
A (+)
C
95 10850
C (.
- )
E
Rev. A1: 20.09.1995
1.
CNY21Exi Datasheet
