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SI9947DY - Dual P-Channel Enhancement-Mode MOSFET

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Part number SI9947DY
Manufacturer TEMIC
File Size 73.38 KB
Description Dual P-Channel Enhancement-Mode MOSFET
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Si9947DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "3.5 –20 0.19 @ VGS = –4.5 V "2.5 Recommended upgrade: Si4947DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ S1 S2 SO-8 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 G1 G2 D1 D1 PĆChannel MOSFET D2 D2 PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –20 "20 "3.5 "2.5 "10 –1.7 2.
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