TEMIC Semiconductors SI9947DY
Dual P-Channel Enhancement-Mode MOSFET
SI9947DY Specifications
- Drain-Source Resistance : 100mΩ
- Min Breakdown Voltage : 20V
- Terminals : 8
- Max Power Dissipation : 2W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | SI9947DY |
|---|---|
| Datasheet | SI9947DY Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | Dual P-Channel Enhancement-Mode MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS PD TJ, Tstg –20 "20 "3.5 "2.5 "10 –1.7 2.0 1.3 –55 to 150 V A W _C Thermal Resistance Ratings Parameter Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 62.5 _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134. A SPICE Model data sheet is available for this product (FaxBack document #70636). Siliconix S-47958—Rev. F, 15-Apr-96 1 Si9947DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Static Gate Threshold Voltage Gate-Body Leakage Zero Gate V...
