Datasheet4U Logo Datasheet4U.com

Si9943DY - Dual MOSFET

📥 Download Datasheet

Datasheet preview – Si9943DY

Datasheet Details

Part number Si9943DY
Manufacturer TEMIC
File Size 290.25 KB
Description Dual MOSFET
Datasheet download datasheet Si9943DY Datasheet
Additional preview pages of the Si9943DY datasheet.

📁 Similar Datasheet

  • SI9940DY - Dual N-Channel Enhancement Mode MOSFET (Siliconix)
  • SI9942DY - Complimentary 20-V (D-S) MOSFET (Vishay)
  • SI9945AEY - Dual N-Channel 60-V (D-S)/ 175C MOSFET (Vishay Siliconix)
  • SI9945BDY - Dual N-Channel 60-V (D-S) MOSFET (Vishay)
  • SI9948AEY - Dual P-Channel 60-V (D-S)/ 175C MOSFET (Vishay Siliconix)
  • SI9948DY-NL - Dual P-Channel 60V MOSFET (VBsemi)
  • SI9910 - Adaptive Power MOSFET Driver1 (Vishay Siliconix)
  • SI9912 - Half-Bridge MOSFET Driver for Switching Power Supplies (Vishay Siliconix)
  • SI9913 - Dual MOSFET Bootstrapped Driver with Break-Before-Make (Vishay Siliconix)
  • SI9925 - N-channel enhancement mode field-effect transistor (NXP)
Other Datasheets by TEMIC
  • Si9942DY - Dual Enhancement-Mode MOSFET
  • Si9944DY - Dual N-Channel Enhancement-Mode MOSFET
  • SI9945DY - Dual N-Channel Enhancement-Mode MOSFET
  • SI9947DY - Dual P-Channel Enhancement-Mode MOSFET
  • Si9948DY - Dual P-Channel Enhancement-Mode MOSFET
  • Si9950DY - Complementary MOSFET Half-Bridge
  • Si9952DY - Dual Enhancement-Mode MOSFET
  • Si9955DY - Dual N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription

Click to expand full text
TEMIC Siliconix Si9943DY Dual Enhancement-Mode MOSFET (N- and P-Channel) Product Summary Vns(V) N-Channel 20 P-Channel -20 rnS(on) (Q) 0.125 @vGS = 10V 0.250@VGS = 4.5 V 0.160@VGS = -10 V 0.300 @ VGS = -4.5 V In (A) ±3.0 ±2.0 ±2.8 ±2.0 Dl Dl S2 80-8 0Sl Gl 2 S2 3 G2 4 Dl 7 Dl 6 D2 5 D2 G1o---J H 0 0 ~ ~ ThpView Sl D2 D2 :Hs N-Channel MOSFET P-Channel MOSFET Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150'C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation (Surface Mounted on FR4 Board) Operating Junction and Storage Thmperature Range ITA=25'C ITA=70'C ITA=25'C ITA= 70'C Symbol Vns VGS In InM Is Pn TJ.
Published: |