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TK063N60Z1 - Silicon Carbide N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA) 3. Packaging and Internal Circuit TK063N60Z1 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25.
  • unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Si.

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Datasheet Details

Part number TK063N60Z1
Manufacturer Toshiba
File Size 612.07 KB
Description Silicon Carbide N-Channel MOSFET
Datasheet download datasheet TK063N60Z1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS�) TK063N60Z1 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.053 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.47 mA) 3. Packaging and Internal Circuit TK063N60Z1 1: Gate 2: Drain (heatsink) 3: Source TO-247 4.