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TK068N65Z5 - Silicon N-channel MOSFET

Key Features

  • (1) Fast reverse recovery time: trr = 135 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ. ) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.69 mA) 3. Packaging and Internal Circuit TK068N65Z5 TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-06 2024-01-24 Rev.1.0 TK068N65Z5 4. Absolute Maximum Ratin.

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Datasheet Details

Part number TK068N65Z5
Manufacturer Toshiba
File Size 493.23 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK068N65Z5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS�) TK068N65Z5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.052 Ω (typ.) (3) High-speed switching properties with the lower capacitance. (4) Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.69 mA) 3. Packaging and Internal Circuit TK068N65Z5 TO-247 1: Gate 2: Drain (heatsink) 3: Source ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-06 2024-01-24 Rev.1.0 TK068N65Z5 4.