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TK065U65Z - Silicon N-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA) 3. Packaging and Internal Circuit TK065U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25.
  • unless otherwise.

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Datasheet Details

Part number TK065U65Z
Manufacturer Toshiba
File Size 500.80 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK065U65Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS�) TK065U65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.051 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.69 mA) 3. Packaging and Internal Circuit TK065U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4.