The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TK09H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV)
TK09H90A
Switching Regulator Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 1.0Ω (typ.) : |Yfs| = 6S (typ.) Unit: mm
: IDSS = 100 µA (max) (VDS = 720V) : Vth = 2.0~4.
TK09H90A Datasheet
