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TSM4835 - 30V P-Channel MOSFET

Key Features

  • — — — Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Block Diagram Ordering Information Part No. TSM4835CS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Maximum Power Dissipation Ta = 25 C Ta > 25 oC Operating Junction Temperature Operating Junction and Storage Temperat.

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Datasheet Details

Part number TSM4835
Manufacturer Taiwan Semiconductor Company
File Size 194.41 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM4835 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4835 Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain www.DataSheet4U.com 30V P-Channel Enhancement Mode MOSFET VDS = - 30V RDS (on), Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features — — — Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage Block Diagram Ordering Information Part No. TSM4835CS Packing Tape & Reel Package SOP-8 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.