Datasheet Summary
Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain
..
30V P-Channel Enhancement Mode MOSFET
VDS =
- 30V RDS (on), Vgs @
- 10V, Ids @
- 9.5A =18mΩ RDS (on), Vgs @
- 4.5V, Ids @
- 7.5A =30mΩ
Features
Advanced trench process technology High density cell design for ultra low on-resistance High gate voltage
Block Diagram
Ordering Information
Part No. TSM4835CS Packing Tape & Reel Package...