TSM4392 Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - - High-Side DC/DC Conversion Notebook Sever Ordering Information Part No. TSM4392CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 75 C Limit 30 ±20 12.5 50 2.7 3.0 1.9 +150 - 55 to +150 Unit V V A A A W o o Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 10 sec. Symbol RӨJF RӨJA Limit 25 50 Unit o o C/W C/W 1/4 Version: Preliminary Preliminary .. 30V N-Channel MOSFET Electrical Specifications (Ta = 25o C unless otherwise...