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TSM4410 - N-Channel MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current.
  • Block Diagram Ordering Information Part No. TSM4410CS Packing Package SOP-8 Tape & Reel (2,500pcs / Reel) Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction.

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Datasheet Details

Part number TSM4410
Manufacturer Taiwan Semiconductor Company
File Size 159.62 KB
Description N-Channel MOSFET
Datasheet download datasheet TSM4410 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4410 Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain Preliminary www.DataSheet4U.com N-Channel Enhancement Mode MOSFET VDS = 25V ID = 10A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ Features  Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current   Block Diagram Ordering Information Part No.