TSM4410 Description
N-Channel Enhancement Mode MOSFET VDS = 25V ID = 10A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ.
TSM4410 Key Features
- Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Vo