Datasheet Summary
Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain
Preliminary
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N-Channel Enhancement Mode MOSFET
VDS = 25V ID = 10A RDS (on), Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ
Features
- Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current
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Block Diagram
Ordering Information
Part No. TSM4410CS Packing Package SOP-8
Tape & Reel (2,500pcs /...