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TSM4416D - 30V Dual N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4416D
Manufacturer Taiwan Semiconductor Company
File Size 221.21 KB
Description 30V Dual N-Channel MOSFET
Datasheet download datasheet TSM4416D Datasheet

Full PDF Text Transcription (Reference)

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Preliminary TSM4416D 30V Dual N-Channel MOSFET www.DataSheet4U.com SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 19 @ VGS = 10V 28 @ VGS = 4.5V ID (A) 8.5 6 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PWM Application Ordering Information Part No. TSM4416DCS RL Package SOP-8 Packing 2.