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TSM4415 - 30V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram (1,2,3).

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Datasheet Details

Part number TSM4415
Manufacturer Taiwan Semiconductor Company
File Size 162.33 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet TSM4415 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary www.DataSheet4U.com TSM4415 30V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 26 @ VGS = -20V 35 @ VGS = -10V SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5, Drain ID (A) -8.0 -8.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram (1,2,3) Application ● ● Load Switch PA Switch (4) Ordering Information Part No. TSM4415CS RL Package SOP-8 Packing 2.5kpcs/13” reel (5,6,7,8) P-Channel MOSFET Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.