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TSM4414 - 30V N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4414
Manufacturer Taiwan Semiconductor Company
File Size 372.74 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet TSM4414 Datasheet

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www.DataSheet4U.com TSM4414 30V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 30 26 @ VGS = 10V 40 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain ID (A) 8.5 5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● High-Side DC/DC Conversion Notebook Sever Ordering Information Part No.