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TSM4410D - 25V Dual N-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4410D
Manufacturer Taiwan Semiconductor Company
File Size 382.61 KB
Description 25V Dual N-Channel MOSFET
Datasheet download datasheet TSM4410D Datasheet

Full PDF Text Transcription (Reference)

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TSM4410D www.DataSheet4U.com 25V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 25 15 @ VGS = 10V 21 @ VGS = 4.5V SOP-8 Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain ID (A) 10 8 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch Dc-DC Converters and Motors Drivers Ordering Information Part No. TSM4410DCS RL Package SOP-8 Packing 2.