TSM414K34 Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch PA Switch Ordering Information Part No. TSM414K34CS RL Package SOP-8 Packing 2.5Kpcs / 13” Reel N-Channel MOSFET with Schottky Diode MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current, a,b Continuous Source Current (Diode Conduction) o Maximum Power Dissipation @ Ta = 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS Limit 30 ±20 4 20 4 2 +150 -55 ~ +150 Unit V V A A A W o o TJ TJ, TSTG Schottky Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Drain-Source Voltage Average Forward Current Non-Peak Repetitive Surge Current c VRRM IF IFSM 30 3 20 o Thermal Performance Junction to Ambient Thermal Resistance RӨJA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board using 1 inch sq pad size, t ≤ 10 sec. C. Surge Applied at Rated Load Conditions, Half-Wave, Single Phase, 60Hz. 62.5 C/W 1/4 Version: Preliminary Preliminary TSM414K34 .. 30V N-Channel MOSFET with Schottky Diode MOSFET Electrical Specifications (Ta = 25o C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a Conditions VGS = 0V, ID = 250u A VDS = VGS, ID = 250µA VGS = ±20V, VDS = 0V VDS = 24V, VGS = 0V VDS ≥ 5V, VGS = 10V VGS = 10V, ID = 4A VGS = 4.5V, ID = 2A VDS = 5V, ID = 4A IS = 4A, VGS =...