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TSM4405P - P-Channel MOSFET

General Description

TSM4405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit.

Key Features

  • Low profile package: less than 0.8mm height when mounted on PCB Occupies only 1.21mm of PCB area 2 Less than 30% of the area of a SC-70 Excellent thermal and electrical capabilities Lead free solder bumps available Block Diagram Ordering Information Part No. TSM4405P Packing Tape & Reel Q’ty 3kpcs / 7” Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation (Steady S.

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Datasheet Details

Part number TSM4405P
Manufacturer Taiwan Semiconductor Company
File Size 206.28 KB
Description P-Channel MOSFET
Datasheet download datasheet TSM4405P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TSM4405P www.DataSheet4U.com Single P-Channel 1.8V Specified MicroSURFTM MOSFET Lateral Power™ for Load Switching and PA Switch VDS = - 12V RDS (on), Vgs @ - 4.5V, Ids @ - 4.9A = 55mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ S S D G Patent Pending Description Bump Side View TSM4405P is new low cost, state of the art MicroSURFTM lateral MOSFET process technology in chip scale bondwireless packaging minimizes PCB space and Rds(on) plus provides an ultra low Qg x Rds(on) figure of merit. Features Low profile package: less than 0.8mm height when mounted on PCB Occupies only 1.