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TSM4936D - 30V Dual P-Channel MOSFET

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Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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Datasheet Details

Part number TSM4936D
Manufacturer Taiwan Semiconductor Company
File Size 393.59 KB
Description 30V Dual P-Channel MOSFET
Datasheet download datasheet TSM4936D Datasheet

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TSM4925D www.DataSheet4U.com 30V Dual P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 25 @ VGS = -10V 41 @ VGS = -4.5V SOP-8 Pin Definition: 1. Source 1 8. Drain 2. Gate 1 7. Drain 3. Source 2 6. Drain 4. Gate 2 5. Drain 1 1 2 2 ID (A) -7.1 -5.5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● ● Load Switches Notebook PCs Desktop PCs Ordering Information Part No. TSM4925DCS RL Package SOP-8 Packing 2.
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