TSM4953D Datasheet | Taiwan Semiconductor

Features - - Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application - - Load Switch PA Switch Ordering Information Part No. TSM4953DCS RF Package SOP-8 Packing 2.5Kpcs / 13” Reel Dual P-Channel MOSFET Absolute Maximum Rating (Ta = 25o C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range a,b o o Symbol VDS VGS ID IDM IS PD TJ TJ, TSTG Ta = 25 C Ta = 70 C Limit -30 ±20 -4.9 -20 -2.6 2.5 1.3 +150 - 55 to +150 Unit V V A A A W o o Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Symbol RӨJC RӨJA Limit 40 62.5 Unit o o C/W C/W 1/6 Version: A07 30V Dual P-Channel MOSFET Electrical Specifications (Ta = 25o C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a a .. Conditions...