Datasheet Summary
600V N-Channel Power MOSFET
TO-220 ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600 2.5 @ VGS =10V
ID (A)
General Description
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology.
Features
- Robust high voltage termination
- Avalanche energy specified
- Diode is characterized for use in bridge...