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TSM4N60 Datasheet 600v N-channel Power MOSFET

Manufacturer: Taiwan Semiconductor Company

Overview: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 2.

General Description

The TSM4N60 is produced using advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology.

Key Features

  • Robust high voltage termination.
  • Avalanche energy specified.
  • Diode is characterized for use in bridge circuits.
  • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Block Diagram Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N60CZ C0G TO-220 TSM4N60CI C0 ITO-220 TSM4N60CI C0G ITO-220 TSM4N60CH C5 TO-251 TSM4N60CH C5G TO-251 TSM4N.

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