Datasheet Details
| Part number | TSM5N50 |
|---|---|
| Manufacturer | Taiwan Semiconductor Company |
| File Size | 393.86 KB |
| Description | 500V N-Channel Power MOSFET |
| Datasheet |
 TSM5N50 Datasheet
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General Description
The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- Low gate charge typical @ 13nC Low Crss typical @ 8.5pF Fast Switching 100% avalanche tested Improved dv/dt capability Block Diagram Ordering Information Part No. TSM5N50CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Peak Diode Recovery (Note 2) Single.