TSM6866SD - 20V Dual N-Channel MOSFET

Datasheet Summary

Description

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Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

Taiwan Semiconductor Company

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Datasheet Details

Part number	TSM6866SD
Manufacturer	Taiwan Semiconductor Company
File Size	419.62 KB
Description	20V Dual N-Channel MOSFET
Datasheet	TSM6866SD Datasheet
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TSM6866SD 20V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V www.DataSheet4U.com TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 ID (A) 6.0 5.2 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Specially Designed for Li-on Battery Packs Battery Switch Application Ordering Information Part No.

Published: Mar 6, 2010 |