TSM6866SD Overview
TSM6866SD 20V Dual N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 4.5V 40 @ VGS = 2.5V.
TSM6866SD Key Features
- Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
- Specially Designed for Li-on Battery Packs Battery Switch Application